Pseudo SLC
pSLC technology simulates MLC as an SLC Cell structure, and through the adjustment of SSD firmware and algorithm, the original one Cell unit storing 2-bit MLC NAND Flash, is simulated as the SLC storage model of 1 Cell storing 1 bit.
As pSLC reconfigures the MLC Cell layout, it can elevate the SSD read-write performance to the equivalent SLC level with extended usage longevity, which may adversely sacrifice half of the capacity of MLC SSD.
NVMe™ SSD
256GB / 512GB / 1024GB
NAND Flash: 3D TLC NAND Flash
Interface: PCIe® Gen4 x4
Sequential Read: UP to 3,700 MB/s
Sequential Write: UP to 2,600 MB/s